Low-power optoelectronic IC

Author

Schneider, Kerstin ; Förtsch, Michael ; Zimmermann, Horst

Author_Institution

Inst. of Electr. Meas. & Circuit Design, Vienna Univ. of Technol., Austria

fYear

2004

fDate

8-9 Nov. 2004

Firstpage

83

Lastpage

86

Abstract

A very low-power optoelectronic integrated circuit (OEIC) for highly parallel optical receivers is introduced. It is necessary to minimize the power consumption of each optical receiver to enable an array of receivers. An integrated photodiode with low input capacitance takes care of the detection of visible and near infrared light. Rise- and fall times of t_r=470 ps and t_f=421 ps, with an overall (optical and electrical) power consumption of 1.77 mW at a data rate of 500 Mb/s down to a power consumption of 0.66 mW at 40 Mb/s, were achieved. Due to the pin photodiode, a standard 0.6 μm BiCMOS process is used, which needs only one minor process modification for the integration of the pin photodiode.

Keywords

infrared spectra; integrated optoelectronics; optical receivers; p-i-n photodiodes; visible spectra; 0.6 micron; 0.66 mW; 1.77 mW; 421 ps; 470 ps; BiCMOS; OEIC; bipolar complementary metal oxide semiconductor; electrical power consumption; infrared spectra; integrated photodiode; low input capacitance; low power optoelectronic integrated circuit; optical power consumption; parallel optical receivers; pin photodiode; visible spectra; BiCMOS integrated circuits; Doping; Energy consumption; Epitaxial layers; Laser beams; Optical arrays; Optical receivers; PIN photodiodes; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on

Print_ISBN

0-7803-8574-8

Type

conf

DOI

10.1109/EDMO.2004.1412403

Filename

1412403