DocumentCode :
2880031
Title :
Ti: sapphire buried channel waveguide laser by proton implantation
Author :
Laversenne, L. ; Borca, C.N. ; Pollnau, M. ; Moretti, P. ; Grivas, C. ; Shepherd, D.P. ; Eason, R.W.
Author_Institution :
Inst. of Imaging & Appl. Opt., Ecole Polytech. Fed. de Lausanne, Lausanne
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Laser emission near 780 nm with 2 mW output power and 3.3% slope efficiency from a Ti:sapphire buried channel waveguide is demonstrated. The sample was fabricated by proton implantation.
Keywords :
ion implantation; sapphire; titanium; waveguide lasers; Al2O3:Ti; buried channel waveguide laser; laser emission; proton implantation; wavelength 780 nm; Laser excitation; Laser modes; Mirrors; Optical pumping; Optical refraction; Optical waveguides; Protons; Pump lasers; Solid lasers; Waveguide lasers; (130.2790) Guided waves; (140.3590) Lasers, titanium; (230.7380) Waveguides, channeled;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628765
Filename :
4628765
Link To Document :
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