Title :
A single-chip high-voltage shallow-junction BORSHT-LSI
Author :
Ohno, Tetsufumi ; Sakurai, Takayasu ; Inabe, Y. ; Koinuma, T.
Author_Institution :
NTT Atsugi Electrical Comm. Lab., Kanagawa, Japan
Abstract :
A single chip containing both the high and low voltage BORSHT functions will be discussed. The chip has a die area of 4.25mm×6.21mm, and was fabricated with 350V PNPN devices with shallow junctions and a dielectrically-isolated complementary bipolar technique.
Keywords :
Batteries; Feeds; Integrated circuit interconnections; Laboratories; Large scale integration; Protection; Subscriber loops; Switches; Switching circuits; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156676
