DocumentCode :
2880229
Title :
1Mb DRAM alternatives
Author :
Rosenweig, W. ; Kirsch, H.
Author_Institution :
AT&T Bell Laba., Allentown, PA
Volume :
XXVII
fYear :
1984
fDate :
22-24 Feb. 1984
Firstpage :
132
Lastpage :
133
Abstract :
Since 1970, DRAMs have grown from 1K to 256K. They have been the technology leaders which helped push design rules from 10μm down to under 2μm. Since the 4K generation, the leaders have been the address multiplexed ×1 DRAMs in 16Pin, 300mil DIPs. The power supply has become a standard 5V... There are many possibilities at the 1M level. The x4 or x8 organizations preferred by small system designers may begin to dominate the market. Video RAMs and other smart memories may become much more pervasive. New packing alternatives may prove to be the most effective. The 5V power supply may no longer be viable. New technological innovations may be needed to provide the required packing densities, while retaining adequate margins and levels of reliability. New procedures may be needed to test such large memories.
Keywords :
Circuit testing; Electronics packaging; History; Memory management; Power supplies; Random access memory; Read-write memory; Research and development management; Space technology; Technology management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1984.1156684
Filename :
1156684
Link To Document :
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