DocumentCode :
2880273
Title :
Relative intensity noise characteristics in a frequency stabilized modelocked semiconductor laser system
Author :
Lee, Wangkuen ; Choi, Myoung Taek ; Izadpanah, Hossein ; Delfyett, Peter J.
Author_Institution :
Center for Res.&Educ. in Opt.&Lasers, Univ. of Central Florida, Orlando, FL
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
RIN characteristics in a frequency stabilized MSL were experimentally and theoretically investigated. Average RIN level of less than -150 dB/Hz as well as Modal RIN reduction of approximately 3 dB were obtained from the frequency stabilized MSL.
Keywords :
laser beams; laser frequency stability; laser mode locking; laser noise; semiconductor lasers; RIN characteristics; frequency stabilized MSL system; modal RIN reduction; modelocked semiconductor laser; relative intensity noise characteristics; Adaptive optics; Frequency; Laser modes; Laser noise; Laser radar; Laser stability; Optical feedback; Optical noise; Semiconductor device noise; Semiconductor lasers; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628779
Filename :
4628779
Link To Document :
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