Title :
Opportunities and limitations in ultra high speed SRAMs
Author_Institution :
Fairchild Advanced Res. Center, Palo Alto, CA, USA
Abstract :
Several design approaches and technologies have shown impressive abilities to produce SRAMs with densities greater than 1Kb and access times less than 25ns. Panelists will examine opportunities to develop further these technologies and produce a density of ≥64Kb and access time of ≤5ns. Issues to be probed include the access time of merged bipolar memories and the cell sizes and economics of GaAs memories.
Keywords :
Delay; Design engineering; Gallium arsenide; Integrated circuit interconnections; Lithography; MOS devices; Power system reliability; Random access memory; Read-write memory; Testing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156696
