DocumentCode
2880495
Title
Effects of Cd-free buffer layer for CuInSe2 thin-film solar cells
Author
Nii, T. ; Sugiyama, I. ; Kase, T. ; Sato, M. ; Kaniyama, Y. ; Kuriyagawa, S. ; Kushiya, K. ; Takeshita, H.
Author_Institution
Central R&D Lab., Showa Shell Sekiyu KK, Asugi, Japan
Volume
1
fYear
1994
fDate
5-9 Dec 1994
Firstpage
254
Abstract
A ZnO buffer layer by a chemical-bath deposition (CBD) method is developed in this study to improve the interface quality between the n-ZnO window layer and p-CuInSe2 (CIS) thin-film absorber in CIS thin-film solar cells as one of the approaches to the fabrication of Cd-free thin-film solar cells. The optimization of the fabrication conditions of CBD-ZnO leads to an efficiency of about 10%. These results indicate that the CBD-ZnO buffer layer has a rather high capability to fabricate high-efficiency CIS thin-film solar cells
Keywords
CVD coatings; chemical vapour deposition; copper compounds; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; 10 percent; CIS thin-film solar cells; Cd-free buffer layer; CuInSe2; CuInSe2 thin-film solar cells; ZnO; ZnO buffer layer; chemical-bath deposition; fabrication conditions; interface quality improvement; thin-film absorber; Buffer layers; Computational Intelligence Society; MOCVD; Photovoltaic cells; Scanning electron microscopy; Sputtering; Substrates; Surface morphology; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location
Waikoloa, HI
Print_ISBN
0-7803-1460-3
Type
conf
DOI
10.1109/WCPEC.1994.519856
Filename
519856
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