Title :
Modulation-speed enhancement of a GaN based green light-emitting-diode (LED) by use of n-type barrier doping for plastic optical fiber (POF) communication
Author :
Huang, H.-Y. ; Shi, J.-W. ; Wu, Y.-S. ; Chyi, J.-I. ; Sheu, J.K. ; Lai, W.C. ; Lin, G.R. ; Pan, Ci-Ling
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli
Abstract :
We demonstrate a high-speed green GaN light-emitting-diode for plastic optical fiber communication. By use of n-type doping in barrier layers, superior performance of modulation-speed and output-power to undoped control has been observed.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; optical fibre communication; optical modulation; semiconductor doping; wide band gap semiconductors; GaN; GaN based green light-emitting-diode; barrier layers; modulation-speed enhancement; n-type barrier doping; plastic optical fiber communication; Bandwidth; Doping; Electrical resistance measurement; Gallium nitride; High speed optical techniques; Light emitting diodes; Optical fibers; Optical films; Plastics; Quantum well devices; (060.2330) Fiber Optics communications; (230.3670) Light-emitting diodes;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628795
