DocumentCode :
2880550
Title :
Enhancement of light extraction in GaInN light-emitting diodes by conductive omni-directional reflectors
Author :
Kim, Jong Kyu ; Xi, J.-Q. ; Luo, Hong ; Schubert, E.Fred ; Cho, Jaehee ; Sone, Cheolsoo ; Park, YongJo
Author_Institution :
Electr. Comput. Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Enhancement of light extraction in a GaInN light-emitting diode employing a conductive omnidirectional reflector consisting of GaN, an indium-tin oxide nanorod low-refractive-index layer, and an Ag layer is presented.
Keywords :
distributed Bragg reflectors; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; refractive index; silver; tin compounds; Ag; GaInN; ITO; conductive omnidirectional reflectors; indium-tin oxide nanorod; light emitting diodes; light extraction enhancement; low-refractive-index layer; silver layer; Gallium nitride; Indium tin oxide; Light emitting diodes; Optical films; Optical refraction; Optical scattering; Optical surface waves; Reflectivity; Refractive index; Scanning electron microscopy; (230.0250) Optoelectronics; (230.3670) Light-emitting diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628796
Filename :
4628796
Link To Document :
بازگشت