DocumentCode
2880590
Title
Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes
Author
Chang, Yi-An ; Yen, Sheng-Horng ; Ko, Tsung-Hsine ; Wang, Te-Chung ; Lu, Chun-Yi ; Kuo, Hao-Chung ; Kuo, Yen-Kuang ; Lu, Tien-Chang ; Wang, Shing-Chung
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; ultraviolet sources; AlGaInN; MQW; UV LED; electron-block layer fabrication; quantum well; ultraviolet light-emitting diode; wavelength 370 nm; Aluminum gallium nitride; Electrons; Etching; Fabrication; Gallium nitride; III-V semiconductor materials; Leakage current; Light emitting diodes; Physics; Power generation; (160.6000) Semiconductors, including MQW; (230.3670) Light-emitting diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628798
Filename
4628798
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