Title :
Investigation of InGaN/GaN light emitting diodes by excimer laser etching
Author :
Huang, Hung-Wen ; Chu, Jung-Tang ; Kao, Chih-Chiang ; Yu, Chang-Chin ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface which using Ni nano-mask and laser etching methods were demonstrated and analyzed. The light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface with laser etching energy of 300 mJ/cm-2 is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beam etching; light emitting diodes; masks; nanostructured materials; rough surfaces; self-assembly; wide band gap semiconductors; GaN; InGaN-GaN; Ni; current 20 mA; efficiency 68 percent; excimer laser etching method; light emitting diodes; light output power; nanomask; nanoroughened top surface; self-assembly; series resistance; wall-plug efficiency; Contact resistance; Gallium nitride; Light emitting diodes; Optical surface waves; Rough surfaces; Surface emitting lasers; Surface resistance; Surface roughness; Temperature; Wet etching; (140.2180) Excimer lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628800
