Title :
A 256K DRAM with descrambled redundancy test capability
Author :
Kantz, Deirdre ; Goetz, J. ; Bender, Ruth ; Baehring, M. ; Wawersig, J. ; Meyer, Wolfgang ; Mueller, Wolfgang
Author_Institution :
Siemens AG, Munich, W. Germany
Abstract :
This paper will describe a double poly TaSi2-gate 256Kb DRAM with 20ns nibble mode ancl 300mW power dissipation affording automatic descrambled testing.
Keywords :
Automatic testing; Circuit testing; Content addressable storage; Decoding; Failure analysis; Laser beams; Laser modes; Quality assurance; Random access memory; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156710
