Title :
A 46ns 256K CMOS SRAM
Author :
Isobe, M. ; Matsunaga, J. ; Sakurai, Takayasu ; Ohtani, T. ; Sawada, Kazuaki ; Nozawa, H. ; Iizuka, Tetsuya ; Kohyama, S.
Author_Institution :
Toshiba Semicond. Device Engin. Lab., Kawasaki, Japan
Abstract :
A 46ns 32K×8 CMOS RAM fabricated with double metal, double poly 1.2μm P-well technology will be reported. The RAM(59.2mm2) has a 10mW operating power at 1MHz and a 30μW standby power.
Keywords :
Artificial intelligence; CMOS memory circuits; CMOS process; Decoding; Detectors; Frequency; Fuses; MOS devices; Random access memory; Read-write memory;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156711
