Title :
A 580 × 500-element CCD imager with a shallow flat P well
Author :
Nagakawa, T. ; Miyatake, S. ; Kosaza, H. ; Misawa, K. ; Okuno, Masayuki ; Iikawa, K. ; Sakamoto, Shinji ; Matsui, O. ; Awane, K.
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
This paper will discuss an interline-transfer CCD imager employing a shallow flat P-well that incorporates CCD shift registers, as well as photodiodes. Aperture ratio is 32% and a smear level of -70db has been obtained. In the unit cell, an N type substrate acts as an overflow drain for blooming suppression, while a single flat P-well is employed in the imaging area.
Keywords :
Apertures; Charge coupled devices; Clocks; Electrons; Image resolution; Lighting; Operational amplifiers; Photodiodes; Solid state circuits; TV;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156728
