DocumentCode
2881035
Title
Silicon bipolar 6.2G Hz 300mW frequency dividers
Author
Onodera, K. ; Sawairi, A. ; Hara, Y. ; Kusama, N.
Author_Institution
NEC System LSI Development Division, Kanagawa, Japan
Volume
XXVIII
fYear
1985
fDate
13-15 Feb. 1985
Firstpage
216
Lastpage
217
Abstract
This paper will describe a divide-by-4 frequency divider for the local oscillator in a microwave communication system operating at 6.2GHz and dissipating 300mW. The circuit consists of self-aligned silicon bipolar transistors fabricated with 1.25μ lithography which have a cutoff frequency of 11GHz.
Keywords
Bipolar transistors; Capacitors; Circuits; Frequency conversion; Gallium arsenide; Local oscillators; Microwave communication; National electric code; Power dissipation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1985.1156730
Filename
1156730
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