Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

Author

Mofrad, M. R Tajari ; Ishihara, R. ; van der Cingel, J. ; Beenakker, C.I.M.

Author_Institution

Dept. of Microelectron. & Comput. Eng. (ME&CE), Delft Univ. of Technol., Delft, Netherlands

fYear

2010

fDate

Sept. 28 2010-Oct. 1 2010

Firstpage

42

Lastpage

48

Abstract

We studied pulsed laser induced epitaxy of silicon using a seeding wafer to realize location-and orientation-control of silicon grain. Silicon grains as large as 4 μm × 4 μm with mostly the preferred (100) orientation area were obtained on top of contact openings through SiO₂ to seeding silicon (100) wafer. The orientation of the seed is inherited by a-Si during the solidification phase of molten-Si. The maximum process temperature of this process is 545°C which is for LPCVD deposition of a-Si. This layer is suitable for high mobility SOI CMOS devices which serve as building blocks for monolithic 3D integration.

Keywords

crystallisation; elemental semiconductors; epitaxial growth; plasma CVD; pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; silicon; solidification; LFCVD deposition; SOI CMOS devices; Si; monolithic 3D integration; pulsed excimer laser crystallization; pulsed laser induced epitaxy; seeding wafer; single grain silicon; solidification; temperature 545 degC; Q measurement; Silicon; Thin film transistors; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on

Conference_Location

Gainesville, FL

ISSN

1944-0251

Print_ISBN

978-1-4244-8400-3

Type

conf

DOI

10.1109/RTP.2010.5623801

Filename

5623801