DocumentCode
2881689
Title
Probe diagnostics of RF plasmas for material processing
Author
Godyak, V.
Author_Institution
RF Plasma Consulting, Brookline, MA, USA
fYear
2011
fDate
26-30 June 2011
Firstpage
1
Lastpage
1
Abstract
Summary form only given. Contemporary probe diagnostics of low pressure rf discharge plasmas implies the measurement of electron energy distribution function, EEDF and variety of plasma parameters found as the corresponding EEDF´s integrals. Such task is quite doable for laboratory plasma experiments in noble gases at a moderate rf power. The attempts to implement probe diagnostics (proved in the laboratory plasma) for diagnostics of chemically active plasma reactors are in many cases frustrating. This problem is not recognized when one just measures the probe I/V characteristic, since distorted and undistorted probe characteristics look similarly. But the problem becomes apparent after double differentiation of the distorted probe characteristics to infer the EEDF. There are three major problems in implementing of meaningful probe diagnostics in rf plasma reactors. They are: a) large frequency spectrum with significant amplitudes of the plasma rf potential corresponding to source and bias fundamental frequencies and their harmonics; b) contamination of the probe surface with a low conductive layer of the reaction products; and c) too high impedance between the plasma and grounded chamber due to the chamber contamination or/and an artificial protective coating. The way to address these problems and examples of EEDF measurements in different rf plasma reactors where these problems are successfully resolved are discussed in this presentation.
Keywords
high-frequency discharges; plasma chemistry; plasma materials processing; plasma pressure; plasma probes; protective coatings; artificial protective coating layer; chemically active plasma reactor; distorted probe characteristics; double differentiation process; electron energy distribution function; grounded chamber contamination analysis; low conductive layer; low pressure rf discharge; material processing; plasma parameter; plasma rf potential; probe diagnostics; rf plasma diagnostics; Frequency measurement; Materials processing; Plasma measurements; Probes; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science (ICOPS), 2011 Abstracts IEEE International Conference on
Conference_Location
Chicago, IL
ISSN
0730-9244
Print_ISBN
978-1-61284-330-8
Electronic_ISBN
0730-9244
Type
conf
DOI
10.1109/PLASMA.2011.5993072
Filename
5993072
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