• DocumentCode
    2881689
  • Title

    Probe diagnostics of RF plasmas for material processing

  • Author

    Godyak, V.

  • Author_Institution
    RF Plasma Consulting, Brookline, MA, USA
  • fYear
    2011
  • fDate
    26-30 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. Contemporary probe diagnostics of low pressure rf discharge plasmas implies the measurement of electron energy distribution function, EEDF and variety of plasma parameters found as the corresponding EEDF´s integrals. Such task is quite doable for laboratory plasma experiments in noble gases at a moderate rf power. The attempts to implement probe diagnostics (proved in the laboratory plasma) for diagnostics of chemically active plasma reactors are in many cases frustrating. This problem is not recognized when one just measures the probe I/V characteristic, since distorted and undistorted probe characteristics look similarly. But the problem becomes apparent after double differentiation of the distorted probe characteristics to infer the EEDF. There are three major problems in implementing of meaningful probe diagnostics in rf plasma reactors. They are: a) large frequency spectrum with significant amplitudes of the plasma rf potential corresponding to source and bias fundamental frequencies and their harmonics; b) contamination of the probe surface with a low conductive layer of the reaction products; and c) too high impedance between the plasma and grounded chamber due to the chamber contamination or/and an artificial protective coating. The way to address these problems and examples of EEDF measurements in different rf plasma reactors where these problems are successfully resolved are discussed in this presentation.
  • Keywords
    high-frequency discharges; plasma chemistry; plasma materials processing; plasma pressure; plasma probes; protective coatings; artificial protective coating layer; chemically active plasma reactor; distorted probe characteristics; double differentiation process; electron energy distribution function; grounded chamber contamination analysis; low conductive layer; low pressure rf discharge; material processing; plasma parameter; plasma rf potential; probe diagnostics; rf plasma diagnostics; Frequency measurement; Materials processing; Plasma measurements; Probes; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science (ICOPS), 2011 Abstracts IEEE International Conference on
  • Conference_Location
    Chicago, IL
  • ISSN
    0730-9244
  • Print_ISBN
    978-1-61284-330-8
  • Electronic_ISBN
    0730-9244
  • Type

    conf

  • DOI
    10.1109/PLASMA.2011.5993072
  • Filename
    5993072