On-wafer device characterization with non-contact probes in the THz band

We present a novel approach for on-wafer device characterization in the THz band. A non-contact method eliminating the need for physical contact with test wafer is proposed. Non-contact method is based on radiative coupling of Network Analyzer´s test ports into coplanar environment of monolithic device (DUT) through integrated planar THz antennas. Broadband butterfly-shaped antennas are used to ensure that the characterization setup is not limited by the bandwidth of the non-contact probes. Calibration is carried out using open and short terminations with different lengths. Initial results based on the full wave simulations demonstrate the broadband and efficient coupling capability of non-contact THz probes as well as the functionality of different terminations for calibration purposes.