• DocumentCode
    2881854
  • Title

    A 10 µ W standby power 256K CMOS SRAM

  • Author

    Kobayashi, Yoshiyuki ; Eguchi, H. ; Kudoh, O. ; Hara, Tenshi ; Ooka, H. ; Sasaki, Innan ; Andoh, Michinori ; Tameda, M.

  • Author_Institution
    NEC Corp., Kanagawa, Japan
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    60
  • Lastpage
    61
  • Abstract
    This paper will report on a 55ns 256K CMOS SRAM that utilizes optimized poly load resistors, buried isolation and Ti polycide to achieve 10μW standby power in a 40.7mm2die.
  • Keywords
    Circuits; Electronics packaging; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156780
  • Filename
    1156780
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2881854