• DocumentCode
    2882166
  • Title

    A 100ns 256K CMOS EPROM

  • Author

    Gaw, H. ; Hokelek, E. ; Holler ; Lee, Sang-Rim ; Olson, Lowell ; Reitsma, M. ; SO, Hing-Cheung ; Tam, Kimo ; Van Buskirk, M.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    This paper will cover a 256K CMOS EPROM with a 400ns access time achieved by use of address transition detection. Redundancy is implemented with metal-covered EPROM cells.
  • Keywords
    Boron; CADCAM; Circuits; Computer aided manufacturing; Decoding; EPROM; Glass; Implants; MOS devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156796
  • Filename
    1156796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2882166