• DocumentCode
    2882241
  • Title

    A 256K flash EEPROM using triple polysilicon technology

  • Author

    Masuoka, Fujio ; Asano, Masahiro ; Iwahashi, H. ; Komuro, Takanori ; Tanaka, Shoji

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    168
  • Lastpage
    169
  • Abstract
    This report will cover a 256K Flash Electrically Erasable PROM with a single transistor cell. Chip size of 5.7×5.8mm2was achieved by using 2.0μ design rules and triple polysilicon technology.
  • Keywords
    Circuit testing; Differential amplifiers; EPROM; Electron emission; Feedback circuits; Negative feedback; Nonvolatile memory; PROM; Plastic packaging; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156798
  • Filename
    1156798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2882241