DocumentCode :
2882241
Title :
A 256K flash EEPROM using triple polysilicon technology
Author :
Masuoka, Fujio ; Asano, Masahiro ; Iwahashi, H. ; Komuro, Takanori ; Tanaka, Shoji
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
168
Lastpage :
169
Abstract :
This report will cover a 256K Flash Electrically Erasable PROM with a single transistor cell. Chip size of 5.7×5.8mm2was achieved by using 2.0μ design rules and triple polysilicon technology.
Keywords :
Circuit testing; Differential amplifiers; EPROM; Electron emission; Feedback circuits; Negative feedback; Nonvolatile memory; PROM; Plastic packaging; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156798
Filename :
1156798
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2882241
بازگشت