GaAs power MMICs for X-band radar applications

Author

Clifton, J.C. ; Dearn, A.W. ; Bestwick, P.R. ; Devlin, L.M. ; Geen, M.W.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

fYear

1994

fDate

34502

Firstpage

42705

Lastpage

42710

Abstract

This paper describes the design of some MMIC components for use in X-band radar applications. In particular, a highly linear VCO suitable for FMCW radar applications is described together with a high gain medium power amplifier and a high packing density power amplifier. A high performance SPDT switch is also explained. The ICs were fabricated upon ion implanted material, which was preferred over alternative methods of material preparation due to its greater uniformity over a 3" wafer diameter. In order to maximise the dynamic range of the device, and hence its power generation capacity, a p-type species was deeply implanted, thereby sharpening the back interface of the doping profile. The dose of the p-type species was carefully calibrated in order to avoid undesirable effects which can arise if a buried p-layer structure is formed

Keywords

CW radar; FM radar; III-V semiconductors; MESFET integrated circuits; MMIC oscillators; MMIC power amplifiers; field effect MMIC; gallium arsenide; ion implantation; power integrated circuits; search radar; voltage-controlled oscillators; 9.2 to 9.5 GHz; FMCW radar; GaAs; GaAs power MMICs; MMIC components; SPDT switch; X-band radar; doping profile back interface; dynamic range; high gain medium power amplifier; high packing density power amplifier; highly linear VCO; ion implanted material; p-type species implantation; power generation capacity; search and rescue transponders;

fLanguage

English

Publisher

iet

Conference_Titel

Modelling, Design and Application of MMIC's, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

369907