Surface morphology of MOCVD-grown GaN on sapphire

Author

Tisch, U. ; Zamir, S. ; Rotschild, A. ; Moreno, K. ; Beckman, D. ; Harari, A. ; Weiser, I. Samid K ; Salzman, J.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

2

fYear

1998

fDate

18-20 May 1998

Firstpage

1419

Abstract

Thin GaN layers on sapphire were grown by metal organic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction and photoluminescence. AFM and SEM studies show flat surfaces with pyramid-like and truncated pyramid-like hexagonal hillocks. Their inclined faces, which form low angles (4.5°-10.5°) with the (0001) plane, are smooth and continuous. They can be interpreted as high index {011¯l} vicinal surfaces

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium compounds; molecular beam epitaxial growth; optical films; photoluminescence; sapphire; scanning electron microscopy; semiconductor growth; (0001) plane; AFM; GaN; MOCVD; MOCVD-grown; SEM; X-ray diffraction; flat surfaces; high index {011¯l} vicinal surfaces; inclined faces; low angles; metal organic chemical vapor deposition; photoluminescence; pyramid-like hexagonal hillocks; sapphire; surface morphology; thin GaN layers; truncated pyramid-like hexagonal hillocks; Atomic force microscopy; Gallium nitride; Light emitting diodes; MOCVD; Optical buffering; Optical films; Optical microscopy; Scanning electron microscopy; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 1998. MELECON 98., 9th Mediterranean

Conference_Location

Tel-Aviv

Print_ISBN

0-7803-3879-0

Type

conf

DOI

10.1109/MELCON.1998.699471

Filename

699471