Title :
A 2.2GHz transmission gate GaAs shift register
Author :
Namordi, M. ; Newman, Paul ; Cappon, A. ; Hanes, L. ; Statz, H.
Author_Institution :
Raytheon Research Division, Lexington, MA, USA
Abstract :
The development of a 8b GaAs shift register employing transmission gates operating at clock rates up to 2.2GHz will be discussed. Low speed operation down to 1MHz has been demonstrated.
Keywords :
Circuit testing; Clocks; Fabrication; Frequency; Gallium arsenide; Logic gates; MESFETs; Pulse inverters; Shift registers; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156832
