Direct comparison of 1300 nm GaInNAs lasers with GaAsN and GaAs barriers

Author

Wei, Y.-Q. ; Wang, X.D. ; Modh, P. ; Hedekvist, P.O. ; Gu, Q.F. ; Sadeghi, M. ; Wang, S.M. ; Larsson, A.

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg

fYear

2005

fDate

12-17 June 2005

Firstpage

19

Lastpage

19

Abstract

In order to better understand the differences between lasers with GaAs and GaAsN barriers, this paper has experimentally compared their basic performance characteristics, including threshold currents and spectral gain characteristics. The laser with GaAsN barriers has a reduced N-content in the quantum well to achieve almost identical emission wavelengths. Otherwise the laser structures are the same and the materials were grown in consecutive growth runs to minimize other differences

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor growth; stimulated emission; 1300 nm; GaAs barriers; GaAsN barriers; GaInNAs lasers; GaInNAs-GaAs; GaInNAs-GaAsN; emission wavelengths; material growth; quantum well; spectral gain characteristics; threshold currents; Current measurement; Electrons; Gain measurement; Gallium arsenide; Optical pulses; Photonics; Quantum well lasers; Threshold current; Waveguide lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 2005. EQEC '05. European

Conference_Location

Munich

Print_ISBN

0-7803-8973-5

Type

conf

DOI

10.1109/EQEC.2005.1567192

Filename

1567192