DocumentCode
2883196
Title
Linewidth enhancement factor in semiconductor quantum well In1-yGayAs and In1-yGayAs1-xNx
Author
Kuznetsova, I. ; Thränhardt, A. ; Schlichenmaier, C. ; Koch, S.W. ; Hader, J. ; Moloney, J.V. ; Chow, W.W.
Author_Institution
Dept. of Phys., Philipps-Univ. Marburg, Germany
fYear
2005
fDate
12-17 June 2005
Firstpage
30
Abstract
This study investigates the linewidth enhancement factor in semiconductor quantum well In1-yGayAs and In1-yGayAs1-x Nx. This work applies the theory based on semiconductor Bloch equations to the calculation of the linewidth enhancement factor of GaInNAs structures compared to an ordinary InGaAs quantum well. Results show that the linewidth enhancement factor is reduced by the inclusion of nitrogen as a consequence of the reduction of carrier-induced refractive index.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; inclusions; indium compounds; refractive index; semiconductor quantum wells; spectral line breadth; GaInNAs structures; In1-yGayAs; In1-yGayAs1-xNx; InGaAs quantum well; carrier-induced refractive index; linewidth enhancement factor; nitrogen inclusion; semiconductor Bloch equations; semiconductor quantum well; Charge carrier density; Indium gallium arsenide; Laser theory; Nitrogen; Optical materials; Optical scattering; Physics; Pulse amplifiers; Refractive index; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN
0-7803-8973-5
Type
conf
DOI
10.1109/EQEC.2005.1567202
Filename
1567202
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