Title :
Linewidth enhancement factor in semiconductor quantum well In1-yGayAs and In1-yGayAs1-xNx
Author :
Kuznetsova, I. ; Thränhardt, A. ; Schlichenmaier, C. ; Koch, S.W. ; Hader, J. ; Moloney, J.V. ; Chow, W.W.
Author_Institution :
Dept. of Phys., Philipps-Univ. Marburg, Germany
Abstract :
This study investigates the linewidth enhancement factor in semiconductor quantum well In1-yGayAs and In1-yGayAs1-x Nx. This work applies the theory based on semiconductor Bloch equations to the calculation of the linewidth enhancement factor of GaInNAs structures compared to an ordinary InGaAs quantum well. Results show that the linewidth enhancement factor is reduced by the inclusion of nitrogen as a consequence of the reduction of carrier-induced refractive index.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; inclusions; indium compounds; refractive index; semiconductor quantum wells; spectral line breadth; GaInNAs structures; In1-yGayAs; In1-yGayAs1-xNx; InGaAs quantum well; carrier-induced refractive index; linewidth enhancement factor; nitrogen inclusion; semiconductor Bloch equations; semiconductor quantum well; Charge carrier density; Indium gallium arsenide; Laser theory; Nitrogen; Optical materials; Optical scattering; Physics; Pulse amplifiers; Refractive index; Solids;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567202
