• DocumentCode
    2883208
  • Title

    A 1Mb DRAM with a folded capacitor cell structure

  • Author

    Horiguchi, F. ; Itoh, Yoshio ; Iizuka, Hideo ; Ogura, M. ; Masuoka, Fujio

  • Author_Institution
    Toshiba VLSI Res. Center, Kawasaki, Japan
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    244
  • Lastpage
    245
  • Abstract
    This report will describe a NMOS DRAM with a folded capacitor cell ( 5.0\\times 6.4\\mu 2) fabricated using buried oxide isolation and two level metalization. Typical \\overline {CAS} access time is 30ns. Active power dissipation ia 270mW at 260ns cycle time.
  • Keywords
    Aluminum; Capacitance; Capacitors; Circuits; FCC; Isolation technology; MOS devices; Milling machines; Random access memory; Read-write memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156855
  • Filename
    1156855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2883208