DocumentCode :
2883222
Title :
Modification of confinement area for efficient electron capture in MQW SCH
Author :
Safonov, Ivan M. ; Klimenko, Mikhail V. ; Sukhoivanov, Igor A.
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
32
Abstract :
This paper proposes different ways of the capture efficiency increase without in-quantum-well-eigenstates spectrum perturbation based on the analysis which uses an original self-consistent methodology of the potential profile and eigenstates spectrum computing. The carrier capture efficiency for different structures and different optimization methods is computed. Finally, the laws of the semiconductor alloy composition are determined, which provide the lattice-matched separate confinement-area and required potential profiles.
Keywords :
eigenvalues and eigenfunctions; electron traps; semiconductor materials; semiconductor quantum wells; MQW SCH; carrier capture efficiency; confinement area modification; efficient electron capture; eigenstates spectrum computing; lattice matching; multiple quantum well separate confinement heterostructure; optimization methods; potential profile; semiconductor alloy composition; separate confinement-area; Carrier confinement; Electrons; Photonics; Potential well; Quantum computing; Quantum well devices; Radioactive decay; Semiconductor materials; Shape; Superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
Type :
conf
DOI :
10.1109/EQEC.2005.1567204
Filename :
1567204
Link To Document :
بازگشت