DocumentCode
2883253
Title
A CML GaAs 4Kb SRAM
Author
Takahashi, Koichi ; Maeda, T. ; Katano, F. ; Furutsuka, T. ; Higashisaka, A.
Author_Institution
NEC Corp., Kawasaki, Japan
Volume
XXVIII
fYear
1985
fDate
13-15 Feb. 1985
Firstpage
68
Lastpage
69
Abstract
A CML GaAs 1k-word by 4b SRAM for high-speed computer cache memory, exhibiting 2.4ns address access time with 1.1W power dissipation will be reported.
Keywords
Abstracts; Circuit testing; Diodes; Electrodes; FETs; Gallium arsenide; Random access memory; Solid state circuits; Switches; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1985.1156859
Filename
1156859
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