Title :
A CML GaAs 4Kb SRAM
Author :
Takahashi, Koichi ; Maeda, T. ; Katano, F. ; Furutsuka, T. ; Higashisaka, A.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
A CML GaAs 1k-word by 4b SRAM for high-speed computer cache memory, exhibiting 2.4ns address access time with 1.1W power dissipation will be reported.
Keywords :
Abstracts; Circuit testing; Diodes; Electrodes; FETs; Gallium arsenide; Random access memory; Solid state circuits; Switches; Wiring;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156859
