• DocumentCode
    2883253
  • Title

    A CML GaAs 4Kb SRAM

  • Author

    Takahashi, Koichi ; Maeda, T. ; Katano, F. ; Furutsuka, T. ; Higashisaka, A.

  • Author_Institution
    NEC Corp., Kawasaki, Japan
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    A CML GaAs 1k-word by 4b SRAM for high-speed computer cache memory, exhibiting 2.4ns address access time with 1.1W power dissipation will be reported.
  • Keywords
    Abstracts; Circuit testing; Diodes; Electrodes; FETs; Gallium arsenide; Random access memory; Solid state circuits; Switches; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156859
  • Filename
    1156859