Title :
Optical properties of AlGaN/GaN and ZnMgO/ZnO quantum wells
Author_Institution :
Digital Printing Div., Samsung Electron. Co., Ltd., Suwon, South Korea
Abstract :
By the development of crystal growth technology, various kinds of semiconductor materials are used to realize the photonic devices of wide wavelength ranges. This article discusses the optical properties of AlGaN/GaN and ZnMgO/ZnO quantum wells for an application of short-wavelength lasers theoretically.
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; gallium compounds; magnesium compounds; optical materials; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; AlGaN-GaN; ZnMgO-ZnO; crystal growth technology; optical properties; photonic devices; quantum wells; semiconductor materials; short-wavelength lasers; Aluminum gallium nitride; Gallium nitride; Laser applications; Laser theory; Photonic crystals; Quantum mechanics; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Zinc oxide;
Conference_Titel :
Quantum Electronics Conference, 2005. EQEC '05. European
Print_ISBN :
0-7803-8973-5
DOI :
10.1109/EQEC.2005.1567211
