• DocumentCode
    2883362
  • Title

    System Redundancy; A Means of Improving Process Variation Yield Degradation in Memory Arrays

  • Author

    Eltawil, Ahmed M. ; Kurdahi, Fadi J.

  • Author_Institution
    California Univ., Irvine, CA
  • fYear
    2006
  • fDate
    26-28 April 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper addresses the fact that memory yield is the dominant issue affecting overall yield in nano-scale devices. It illustrates that by treating yield as a system design parameter, tremendous gains in effective chip yield can be achieved. The techniques outlined are especially suited for applications that have inherent system redundancy such as wireless communication. In that context, the paper illustrates a that system redundancy can easily tolerate up to 1% bit errors in memory while meeting system specifications such as bit error rate (BER) metrics
  • Keywords
    integrated circuit yield; integrated memory circuits; redundancy; memory arrays; memory yield; nanoscale devices; process variation yield degradation; system design parameter; system redundancy; Application specific integrated circuits; Bit error rate; Circuit faults; Degradation; Error correction; Error correction codes; Nanoscale devices; Random access memory; Redundancy; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2006 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    1-4244-0179-8
  • Electronic_ISBN
    1-4244-0180-1
  • Type

    conf

  • DOI
    10.1109/VDAT.2006.258144
  • Filename
    4027516