DocumentCode
2883362
Title
System Redundancy; A Means of Improving Process Variation Yield Degradation in Memory Arrays
Author
Eltawil, Ahmed M. ; Kurdahi, Fadi J.
Author_Institution
California Univ., Irvine, CA
fYear
2006
fDate
26-28 April 2006
Firstpage
1
Lastpage
4
Abstract
This paper addresses the fact that memory yield is the dominant issue affecting overall yield in nano-scale devices. It illustrates that by treating yield as a system design parameter, tremendous gains in effective chip yield can be achieved. The techniques outlined are especially suited for applications that have inherent system redundancy such as wireless communication. In that context, the paper illustrates a that system redundancy can easily tolerate up to 1% bit errors in memory while meeting system specifications such as bit error rate (BER) metrics
Keywords
integrated circuit yield; integrated memory circuits; redundancy; memory arrays; memory yield; nanoscale devices; process variation yield degradation; system design parameter; system redundancy; Application specific integrated circuits; Bit error rate; Circuit faults; Degradation; Error correction; Error correction codes; Nanoscale devices; Random access memory; Redundancy; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test, 2006 International Symposium on
Conference_Location
Hsinchu
Print_ISBN
1-4244-0179-8
Electronic_ISBN
1-4244-0180-1
Type
conf
DOI
10.1109/VDAT.2006.258144
Filename
4027516
Link To Document