DocumentCode
2883518
Title
Control of tunnel coupling using a lateral quantum dot molecule
Author
Beirne, G.J. ; Hermannstädter, C. ; Wang, L. ; Rastelli, A. ; Schmidt, O.G. ; Michler, P.
Author_Institution
Phys. Inst., Univ. Stuttgart, Stuttgart
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We report lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. Single-photon photoluminescence emission has been observed from this quantum dot molecule and the level of coupling can be controlled using a static electric field.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; InGaAs-GaAs; lateral quantum dot molecule; self assembled; single photon photoluminescence emission; static electric field; tunnel coupling; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical control; Optical coupling; Photoluminescence; Quantum computing; Quantum dots; Quantum mechanics; Stimulated emission; (270.5290) Photon statistics; (300.6470) Spectroscopy, semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628974
Filename
4628974
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