Title :
Optimization of silicon Spreading-Resistance Temperature sensor
Author :
Li, Bin ; Lai, P.T. ; Chan, C.L. ; Sin, J.K.O.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
The resistance-temperature (R-T) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated. Experiment results show that dimensions of the device structure, substrate doping strongly affect the maximum operating temperature, while processing conditions only have a slight effect. With appropriately small circular n+ region and high substrate doping, the SRT sensor can function at temperatures up to 400°C at a low current of 2 mA
Keywords :
elemental semiconductors; silicon; temperature sensors; 2 mA; 400 C; Si; design optimization; maximum operating temperature; resistance-temperature characteristics; semiconductor processing; silicon spreading resistance temperature sensor; substrate doping; Appropriate technology; Contacts; Doping; Electrodes; Sensor phenomena and characterization; Silicon compounds; Silicon devices; Temperature sensors; Thermal resistance; Wire;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904207
