• DocumentCode
    2883697
  • Title

    Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

  • Author

    Lin, S.C. ; Yuan, K.H. ; Kuo, James B.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects
  • Keywords
    MIS devices; semiconductor device models; silicon-on-insulator; 2D simulation; MEDICI; SOI partially-depleted dynamic-threshold MOS device; drain-induced barrier lowering; quasi-2D analytical model; short channel effect; Analytical models; Boundary conditions; Electrostatics; Inverters; MOSFET circuits; Poisson equations; Predictive models; Thin film devices; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
  • Conference_Location
    Hong Kong
  • Print_ISBN
    0-7803-6304-3
  • Type

    conf

  • DOI
    10.1109/HKEDM.2000.904213
  • Filename
    904213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2883697