Title :
Measurement of Young´s modulus of nickel silicide film by a surface profiler
Author :
Qin, Ming ; Yuen, C.Y. ; Poon, M.C. ; Chan, W.Y.
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
Young´s modulus of NiSi film formed on crystal silicon is determined by measuring the deflection of the film as a function of the loaded force on the center of it. In order to reduce the error caused by unknown Poisson´s ratio and the boundary of the structure, Si3N4 film with a Young´s modulus of 370 Gpa is used as a reference. The results show that NiSi formed at 350°C has a Young´s modulus of 132 GPa, which is lower than that that of normal grown polysilicon (~160 Gpa) and Si3N4. It means that the NiSi is a promising structure material for MEMS application
Keywords :
Young´s modulus; elastic moduli measurement; metallic thin films; nickel compounds; 350 C; MEMS structural material; NiSi; Young modulus measurement; beam deflection; crystalline silicon substrate; nickel silicide film; surface profiler; Force measurement; Frequency measurement; Nickel; Pressure measurement; Semiconductor films; Silicides; Silicon; Thickness measurement; Transistors; Vibration measurement;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904217
