Characterization of MOS structure inversion and accumulation layer by approximate solution of Schrodinger equation

Author

Ma, Yutao ; Liu, Litian ; Tian, Lilin ; Yu, Zhiping ; Li, Zhijian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2000

fDate

2000

Firstpage

130

Lastpage

133

Abstract

Quantized inversion and accumulation layers are characterized through an approximate method by solving the Schrodinger equation analytically under a triangle potential well approximation. Results are compared with a fully numerical method by self-consistent solution of Schrodinger and Poisson equations. It is shown that both carrier sheet density and surface potential can be determined by analytical solution with sufficiently high accuracy. However, the carrier distribution profile and centroid of mobile charge layer have a large deviation from the numerical results

Keywords

MIS structures; Poisson equation; Schrodinger equation; accumulation layers; carrier density; inversion layers; surface potential; MOS structure; Poisson equation; Schrodinger equation; accumulation layer; carrier distribution profile; carrier sheet density; inversion layer; surface potential; triangle potential well approximation; Charge carrier processes; Doping; Effective mass; Microelectronics; Neodymium; Poisson equations; Potential well; Quantization; Schrodinger equation; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6304-3

Type

conf

DOI

10.1109/HKEDM.2000.904232

Filename

904232