Title :
Characterization of MOS structure inversion and accumulation layer by approximate solution of Schrodinger equation
Author :
Ma, Yutao ; Liu, Litian ; Tian, Lilin ; Yu, Zhiping ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Quantized inversion and accumulation layers are characterized through an approximate method by solving the Schrodinger equation analytically under a triangle potential well approximation. Results are compared with a fully numerical method by self-consistent solution of Schrodinger and Poisson equations. It is shown that both carrier sheet density and surface potential can be determined by analytical solution with sufficiently high accuracy. However, the carrier distribution profile and centroid of mobile charge layer have a large deviation from the numerical results
Keywords :
MIS structures; Poisson equation; Schrodinger equation; accumulation layers; carrier density; inversion layers; surface potential; MOS structure; Poisson equation; Schrodinger equation; accumulation layer; carrier distribution profile; carrier sheet density; inversion layer; surface potential; triangle potential well approximation; Charge carrier processes; Doping; Effective mass; Microelectronics; Neodymium; Poisson equations; Potential well; Quantization; Schrodinger equation; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904232
