Low frequency noise characteristics of InGaAs bow-tie diodes for terahertz detection

Author

Ragauskas, M. ; Palenskis, Vilius ; Matukas, Jonas ; Pralgauskaite, Sandra ; Minkevicius, L. ; Kasalynas, I. ; Seliuta, Dalius ; Valusis, G.

Author_Institution

Radiophys. Dept., Vilnius Univ., Vilnius, Lithuania

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

Detailed investigation of low-frequency noise characteristics in InGaAs bow-tie diodes designed for terahertz detection is carried out within temperature range of 77-300 K. Spectral density of voltage fluctuations at room temperature is found to be proportional to 1/f, while at lower temperatures, 77 K-200 K, Lorentzian-type spectra dominate. Characteristic times of generation - recombination fluctuations responsible for Lorentzian-type spectra in temperatures from 150 K to 200 K ranges from a few microseconds to tens of millisecond, and estimated activation energies vary from 0.15 eV to 0.36 eV.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor device noise; semiconductor diodes; submillimetre wave detectors; terahertz wave detectors; InGaAs; Lorentzian-type spectral density domination; activation energy estimation; bow-tie diode; electron volt energy 0.15 eV to 0.36 eV; generation-recombination fluctuation; low frequency noise characteristics; temperature 293 K to 298 K; temperature 77 K to 300 K; terahertz detection; voltage fluctuation; Fluctuations; Imaging; Indium gallium arsenide; Noise; Semiconductor diodes; Temperature; Voltage fluctuations; 1/f type noise; bow-tie diode; generation-recombination noise; terahertz detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578899

Filename

6578899