Title :
An improved behavioral IGBT model and its characterization tool
Author :
Zhang, Min ; Courtay, A. ; Yang, Zhilian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In this paper an improvement made to the behavioral IGBT model available in the Saber simulator is described. The saturation characteristics have been improved and a characterization tool in order to increase the model ease of use is developed. Using this tool, a 1200 V/600 A commercial IGBT (MITSUBISHI CM 600 HA-24 H) has been fully characterized. The model shows good agreement with measured results
Keywords :
insulated gate bipolar transistors; semiconductor device models; 1200 V; 600 A; IGBT; MITSUBISHI CM 600 HA-24 H; Saber simulator; behavioral model; saturation characteristics; Analytical models; Capacitance; Circuit simulation; Epitaxial layers; Insulated gate bipolar transistors; Integrated circuit modeling; Power electronics; Semiconductor process modeling; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6304-3
DOI :
10.1109/HKEDM.2000.904235
