DocumentCode
2884037
Title
An improved behavioral IGBT model and its characterization tool
Author
Zhang, Min ; Courtay, A. ; Yang, Zhilian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2000
fDate
2000
Firstpage
142
Lastpage
145
Abstract
In this paper an improvement made to the behavioral IGBT model available in the Saber simulator is described. The saturation characteristics have been improved and a characterization tool in order to increase the model ease of use is developed. Using this tool, a 1200 V/600 A commercial IGBT (MITSUBISHI CM 600 HA-24 H) has been fully characterized. The model shows good agreement with measured results
Keywords
insulated gate bipolar transistors; semiconductor device models; 1200 V; 600 A; IGBT; MITSUBISHI CM 600 HA-24 H; Saber simulator; behavioral model; saturation characteristics; Analytical models; Capacitance; Circuit simulation; Epitaxial layers; Insulated gate bipolar transistors; Integrated circuit modeling; Power electronics; Semiconductor process modeling; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong
Conference_Location
Hong Kong
Print_ISBN
0-7803-6304-3
Type
conf
DOI
10.1109/HKEDM.2000.904235
Filename
904235
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