MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics

Author

Kang, L. ; Onishi, K. ; Jeon, Y. ; Byoung Hun Lee ; Kang, C. ; Wen-Jie Qi ; Nieh, R. ; Gopalan, S. ; Choi, R. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

35

Lastpage

38

Abstract

MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO/sub 2/ remain low (EOT of 12.0 /spl Aring/. HfO/sub 2/ with 1/spl times/10/sup -3/ A/cm/sup 2/ at Vg=1.0 V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74 mV/decade and output currents were also demonstrated.

Keywords

MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; HfO/sub 2/-Si; MOSCAP; MOSFET; dopant activation; dual polysilicon gate; equivalent oxide thickness; leakage current; output current; self-aligned processing; single-layer HfO/sub 2/ high-K dielectric thin film; subthreshold swing; Annealing; Crystallization; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Semiconductor films; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904253

Filename

904253