Experimental and simulative investigations of conducted EMI performance of IGBTs for 5-10 kVA converters

Author

Klotz, Frank ; Petzoldt, Jürgen ; Völker, Holger

Author_Institution

Discrete & Power Semicond., Siemens AG, Munich, Germany

Volume

2

fYear

1996

fDate

23-27 Jun 1996

Firstpage

1986

Abstract

Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover, results are explained from a special developed model for prediction of common and differential mode interferences, that is suitable to determine solutions for a better EMC through other design around the semiconductor chip. Results and further possibilities are discussed

Keywords

bipolar transistor switches; electromagnetic compatibility; electromagnetic interference; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device models; semiconductor device testing; 5 to 10 kVA; EMC; common mode interference; conducted EMI performance; differential mode interference; power IGBT switches; power convertor; Circuit testing; Electromagnetic interference; Electromagnetic radiative interference; Frequency domain analysis; Insulated gate bipolar transistors; Predictive models; Switched-mode power supply; Switches; Switching converters; Switching frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE

Conference_Location

Baveno

ISSN

0275-9306

Print_ISBN

0-7803-3500-7

Type

conf

DOI

10.1109/PESC.1996.550111

Filename

550111