Title :
Experimental and simulative investigations of conducted EMI performance of IGBTs for 5-10 kVA converters
Author :
Klotz, Frank ; Petzoldt, Jürgen ; Völker, Holger
Author_Institution :
Discrete & Power Semicond., Siemens AG, Munich, Germany
Abstract :
Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover, results are explained from a special developed model for prediction of common and differential mode interferences, that is suitable to determine solutions for a better EMC through other design around the semiconductor chip. Results and further possibilities are discussed
Keywords :
bipolar transistor switches; electromagnetic compatibility; electromagnetic interference; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device models; semiconductor device testing; 5 to 10 kVA; EMC; common mode interference; conducted EMI performance; differential mode interference; power IGBT switches; power convertor; Circuit testing; Electromagnetic interference; Electromagnetic radiative interference; Frequency domain analysis; Insulated gate bipolar transistors; Predictive models; Switched-mode power supply; Switches; Switching converters; Switching frequency;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.550111
