Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)

Author

Byoung Hun Lee ; Choi, R. ; Kang, L. ; Gopalan, S. ; Nieh, R. ; Onishi, K. ; Jeon, Y. ; Wen-Jie Qi ; Kang, C. ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

39

Lastpage

42

Abstract

MOSFET´s with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films (HfO/sub 2/) and TaN gate electrode. Both self-aligned (higher thermal budget process) and non-self-aligned process (low thermal budget as in the replacement gate process) were used and compared. Excellent electrical characteristics (e.g. S/spl sim/68 mV/dec) and reliability characteristics (e.g. high E/sub BD/, low charge trapping and SILC) were also obtained.

Keywords

MOSFET; dielectric thin films; hafnium compounds; tantalum compounds; 8 to 12 A; MOSFET; TaN gate electrode; TaN-HfO/sub 2/; electrical characteristics; equivalent oxide thickness; high-K gate dielectric thin film; nonself-aligned processing; reliability; self-aligned processing; thermal budget; ultrathin hafnium oxide; Annealing; CMOS process; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904254

Filename

904254