Measurement of electron spin relaxation in charged GaAs quantum dots: Application of nonlinear optical phase-modulation spectroscopy

Author

Cheng, Jun ; Wu, Yanwen ; Xu, Xiaodong ; Sun, Dong ; Steel, D.G. ; Bracker, A.S. ; Gammon, D. ; Sham, L.J.

Author_Institution

H. M. Randall Lab., Univ. of Michigan, Ann Arbor, MI

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Preliminary measurements of the electron spin relaxation rate (T₁) in charged GaAs quantum dots are made using a nonlinear optical phase-modulation spectroscopy technique. T₁ approaches 46 musec at zero magnetic field.

Keywords

III-V semiconductors; electron spin-lattice relaxation; gallium arsenide; gallium compounds; nonlinear optics; optical modulation; semiconductor quantum dots; GaAs; electron spin relaxation; nonlinear optical phase-modulation spectroscopy; semiconductor quantum dots; zero magnetic field; Current measurement; Electron optics; Frequency; Gallium arsenide; Nonlinear optics; Optical modulation; Optical pumping; Phase measurement; Quantum dots; Spectroscopy; (120.5060)Phase Modulation; (300.6380)Modulation Spectroscopy; (300.6470)Semiconductors Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4629023

Filename

4629023