DocumentCode
2884440
Title
A new transition metal oxide sensor material for thermistor applications: Manganese-vanadium-oxide
Author
Gouda, Girish M. ; Nagendra, C.L.
Author_Institution
Laboratory for Electro-Optics Systems (LEOS), Indian Space Research Organization (ISRO), First Cross, First Stage, Peenya Industrial Estate, Bengaluru 560058, India
fYear
2012
fDate
7-10 March 2012
Firstpage
125
Lastpage
128
Abstract
Manganese vanadium oxide thermistor materials both in bulk and thin film form have been prepared and characterized. The bulk materials synthesized by ceramic tape casting and solid state sintering are crystalline in nature while thin films are amorphous even after post deposition annealing at high temperature. The electrical properties´ study clearly shows that these materials follow a typical characteristic of negative temperature coefficient (NTC) of resistivity which is attributed to small polaron hopping. The thin film samples have direct optical band gap and shows increased absorption in the infrared region.
Keywords
NTC; optical band gap; small polaron; thermistor; thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
Conference_Location
Pune, India
Print_ISBN
978-1-4673-1040-6
Type
conf
DOI
10.1109/ISPTS.2012.6260898
Filename
6260898
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