• DocumentCode
    2884440
  • Title

    A new transition metal oxide sensor material for thermistor applications: Manganese-vanadium-oxide

  • Author

    Gouda, Girish M. ; Nagendra, C.L.

  • Author_Institution
    Laboratory for Electro-Optics Systems (LEOS), Indian Space Research Organization (ISRO), First Cross, First Stage, Peenya Industrial Estate, Bengaluru 560058, India
  • fYear
    2012
  • fDate
    7-10 March 2012
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    Manganese vanadium oxide thermistor materials both in bulk and thin film form have been prepared and characterized. The bulk materials synthesized by ceramic tape casting and solid state sintering are crystalline in nature while thin films are amorphous even after post deposition annealing at high temperature. The electrical properties´ study clearly shows that these materials follow a typical characteristic of negative temperature coefficient (NTC) of resistivity which is attributed to small polaron hopping. The thin film samples have direct optical band gap and shows increased absorption in the infrared region.
  • Keywords
    NTC; optical band gap; small polaron; thermistor; thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on
  • Conference_Location
    Pune, India
  • Print_ISBN
    978-1-4673-1040-6
  • Type

    conf

  • DOI
    10.1109/ISPTS.2012.6260898
  • Filename
    6260898