Temperature dependence of avalanche multiplication in spiked electric fields

Author

van den Berg, M.R. ; Nanver, L.K. ; Slotboom, J.W.

Author_Institution

DIMES-ECTM, Delft Univ. of Technol., Netherlands

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

79

Lastpage

82

Abstract

The temperature dependence of avalanche multiplication in spiked electric fields in silicon is investigated for charge carrier transport across highly doped pn-junctions and across thin gate oxides. Impact ionization events with near-zero to positive temperature coefficients are experimentally observed. A model is proposed that explains the positive temperature coefficient in terms of increased effective electric field due to the decrease of the energy relaxation length for increasing temperature.

Keywords

avalanche breakdown; elemental semiconductors; impact ionisation; p-n junctions; silicon; Si; avalanche multiplication; charge carrier transport; electric field spike; energy relaxation length; gate oxide; impact ionization; p-n junction; silicon; temperature dependence; Bipolar transistors; Charge carriers; Current measurement; Doping profiles; Electrons; Impact ionization; MOSFETs; Silicon; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904263

Filename

904263