Impact ionization and photon emission in MOS capacitors and FETs

Author

Palestri, P. ; Pavesi, M. ; Rigolli, P. ; Selmi, L. ; Dalla Serra, A. ; Abramo, A. ; Widdershoven, F. ; Sangiorgi, E.

Author_Institution

DIEGM, Udine, Italy

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

97

Lastpage

100

Abstract

This paper addresses the problem of the origin of majority and minority carriers´ substrate currents in MOS devices. In particular, we present a critical analysis of published and original tunneling experiments by means of a novel, physically based model of impact ionization and hot carrier photon emission and re-absorption in the substrate. The model explains some relevant features of substrate minority carrier currents in saturated nMOSFETs, and provides a better understanding of the origin of substrate currents in tunneling MOS capacitors.

Keywords

MOS capacitors; MOSFET; hot carriers; impact ionisation; luminescence; minority carriers; semiconductor device models; tunnelling; hot carrier photon emission; impact ionization; majority carrier substrate currents; minority carrier substrate currents; n-channel MOSFETs; photon emission; physically based model; saturated nMOSFETs; substrate re-absorption; tunneling MOS capacitors; tunneling experiments; Absorption; Anodes; FETs; Hot carriers; Impact ionization; MOS capacitors; Phonons; Radioactive decay; Substrate hot electron injection; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904267

Filename

904267