Efficiency and stochastic error of Monte Carlo device simulations

Author

Jungemann, C. ; Meinerzhagen, B.

Author_Institution

Inst. fur Theor. Elektrotech. und Mikroelektron., Bremen Univ., Germany

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

109

Lastpage

112

Abstract

Without proper analysis of the stochastic error it is not possible to assess the accuracy or efficiency of Monte Carlo device simulations and misleading results might be obtained. This is demonstrated for the so-called optimized terminal current estimator which turns out to be not more efficient than a standard estimator. Previously published results for the efficiency of nonself-consistent ("frozen field") device simulations are found to be questionable and relaxation of transients to be slower by orders of magnitude compared to the self-consistent case necessitating very long simulation times.

Keywords

Monte Carlo methods; error analysis; semiconductor device models; stochastic processes; Monte Carlo simulation; efficiency; frozen field method; nonself-consistent method; optimized terminal current estimator; self-consistent method; semiconductor device; stochastic error; transient relaxation; Analytical models; Boundary conditions; Current density; Electrostatics; Frequency; Laplace equations; Maxwell equations; Monte Carlo methods; Stochastic processes; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904270

Filename

904270