Ensemble Monte Carlo/molecular dynamics simulation of gate remote charge effects in small geometry MOSFETs

Author

Kawashima, I. ; Kamakura, Y. ; Taniguchi, K.

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

113

Lastpage

116

Abstract

We present an ensemble Monte Carlo simulation coupled with molecular dynamics method to analyze the point charge effects in small MOSFETs characteristic. The carrier mobility in MOSFETs with ultra-thin gate dielectrics is analyzed taking account of the effect of the ionized impurities in the gate electrode through the remote charge scattering. The less significant mobility degradation is observed in MOSFETs with high-k gate dielectric compared with the same effective thickness SiO/sub 2/ film.

Keywords

MOSFET; Monte Carlo methods; carrier mobility; impurity scattering; molecular dynamics method; semiconductor device models; SiO/sub 2/; SiO/sub 2/ film; carrier mobility; effective oxide thickness; ensemble Monte Carlo simulation; gate electrode; high-k gate dielectric; ionized impurity; molecular dynamics method; remote point charge scattering; ultrasmall MOSFET; ultrathin gate dielectric; Computational modeling; Degradation; Electrodes; Electrons; Impurities; Information geometry; MOSFETs; Monte Carlo methods; Particle scattering; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904271

Filename

904271