Title :
A green´s function approach to the analysis of non volatile memory device variability as a function of individual trap position
Author :
Tisseur, R. ; Guerrieri, S. Donati ; Bonani, Fabrizio ; Ghione, G. ; Benvenuti, A. ; Ghetti, Andrea
Author_Institution :
Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy
Abstract :
This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2 interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations [1], in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF) [2].
Keywords :
Green´s function methods; Monte Carlo methods; random-access storage; silicon compounds; Green function approach; Monte Carlo simulations; RDF; RTN; Si-SiO2; Synopsys SDevice; advanced floating gate nonvolatile memories; individual trap position; random doping fluctuations; random telegraph noise; variability analysis; Doping; Electron traps; Green´s function methods; Logic gates; Resource description framework; Silicon; Threshold voltage;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578931
