A green´s function approach to the analysis of non volatile memory device variability as a function of individual trap position

Author

Tisseur, R. ; Guerrieri, S. Donati ; Bonani, Fabrizio ; Ghione, G. ; Benvenuti, A. ; Ghetti, Andrea

Author_Institution

Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO₂ interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations [1], in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF) [2].

Keywords

Green´s function methods; Monte Carlo methods; random-access storage; silicon compounds; Green function approach; Monte Carlo simulations; RDF; RTN; Si-SiO₂; Synopsys SDevice; advanced floating gate nonvolatile memories; individual trap position; random doping fluctuations; random telegraph noise; variability analysis; Doping; Electron traps; Green´s function methods; Logic gates; Resource description framework; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578931

Filename

6578931