Optimizing the electromigration performance of copper interconnects

Author

Besser, P. ; Marathe, A. ; Zhao, L. ; Herrick, M. ; Capasso, C. ; Kawasaki, H.

Author_Institution

Technol. Dev. Group, Adv. Micro Devices Inc., Austin, TX, USA

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

119

Lastpage

122

Abstract

The effects of changes in linewidth, barrier type and anneal temperature on electromigration (EM) reliability of inlaid Cu interconnect lines were investigated. Methods developed for quantifying changes in grain size and orientation with changes in processing are detailed and applied to understand their impact on electromigration. While interfaces and microstructure both play a role in Cu reliability, interface diffusion is the dominant effect. For a constant interface and linewidth, grain size is shown to affect reliability.

Keywords

annealing; copper; diffusion barriers; electromigration; grain size; integrated circuit interconnections; integrated circuit reliability; Cu; annealing; copper interconnect; crystallographic orientation; diffusion barrier; electromigration reliability; grain size; interface diffusion; linewidth; microstructure; Artificial intelligence; Copper; Electromigration; Failure analysis; Grain boundaries; Grain size; Integrated circuit interconnections; Integrated circuit reliability; Microstructure; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904272

Filename

904272