25ns 256K × 1/64K × 4 CMOS SRAMs

Author

Ichinose, Kento ; Kohno, Yusuke ; Shinohara, Hirofumi ; Kawai, Yusuke ; Akasaka, Y. ; Kayano, S.

Author_Institution

Mitsubishi LSI Research and Development Laboratory, Hyogo, Japan

Volume

XXIX

fYear

1986

fDate

19-21 Feb. 1986

Firstpage

248

Lastpage

249

Keywords

Aluminum; Delay effects; Delay lines; Inverters; Latches; Logic arrays; Power dissipation; Random access memory; Read-write memory; Trigger circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1986 IEEE International

Conference_Location

Anaheim, CA, USA

Type

DOI

10.1109/ISSCC.1986.1156939

Filename

1156939

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